Abstract
A two-stream model which describes impurity flux and point defect flux independently has been proposed. Equation for point defect flux gives macroscopic information about the impurity flux equation, such as enhanced diffusion coefficient and time duration of TED. The model also accommodates the ramp up process where enhanced diffusion and time duration parameters become variable. This simple model can be controlled and tuned simply and gives us prominent features of TED.
Keywords: Ion implantation, transient enhanced diffusion, two-stream model, point defect, diffusion coefficient, pairing, damage, annealing, electric field, interstitial Si, vacancy, intrinsic carrier concentration, solid solubility, dose, amorphous/crystal interface, (311) defect, diffusion length, dislocation loop.
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